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Plasma etching
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#	Item
31	PEER-REVIEWED ARTICLE bioresources.com USING AGEING EFFECT FOR HYDROPHOBIC MODIFICATION OF COTTON FABRIC WITH ATMOSPHERIC PRESSURE PLASMA Add to Reading List Source URL: www.ncsu.edu Language: English - Date: 2011-07-28 09:24:06 Microtechnology Physics Chemical properties Intermolecular forces Plasma physics Hydrophobe Plasma Finishing Etching Chemistry Materials science Semiconductor device fabrication
32	Patterning of GST for Non volatile Phase-Change Memory Applications B. Salhi1, T. Chevolleau1, C. Vizioz2, C. Jahan2, S. Maitrejean2, C. Vallee1, T. Baron1, and O. Joubert1 1LTM Add to Reading List Source URL: www-leti.cea.fr Language: English - Date: 2012-05-24 09:20:21 Technology Physics Etching Plasma etching Plasma Gete GeSbTe Semiconductor device fabrication Materials science Microtechnology
33	News Release Nanoplas Announces Important New 14nm Order and Joint Development Agreement with CEA-Leti High-selectivity dry-etch for 14nm OEM pilot line will replace wet etch; CEA-Leti to qualify the system for addition Add to Reading List Source URL: www-leti.cea.fr Language: English - Date: 2013-11-27 09:43:38 Technology Etching Plasma processing Microelectromechanical systems Transducers Dry etching Isotropic etching Plasma etching Wafer Semiconductor device fabrication Microtechnology Materials science
34	Patterning of GST for Non volatile Phase-Change Memory Applications B. Salhi1, T. Chevolleau1, C. Vizioz2, C. Jahan2, S. Maitrejean2, C. Vallee1, T. Baron1, and O. Joubert1 1LTM Add to Reading List Source URL: www-leti.cea.fr Language: English - Date: 2012-05-24 09:20:21 Technology Physics Etching Plasma etching Plasma Gete GeSbTe Semiconductor device fabrication Materials science Microtechnology
35	Fluorocarbon-Based Passivation in STI Plasma Etching A.P. Milenina, R. Athimulama, M. Demanda, and B. Coenegrachtsb b Lam © IMEC[removed]CONFIDENTIAL Add to Reading List Source URL: www-leti.cea.fr Language: English - Date: 2012-05-24 09:11:51 Microtechnology Semiconductor device fabrication IMEC Leuven 45 nanometer 65 nanometer Etching OK Confidential Materials science Technology Electronics
36	STUDY OF DAMAGE CAUSED BY NONREACTIVE Ar PLASMA ON AN ORGANIC LOW-K MATERIAL IMEC CORE CMOS JF de Marneffe, R. Ljazouli, L. Souriau, L. Zhang, C. Wilson, W. Boullart and M. R. Baklanov Add to Reading List Source URL: www-leti.cea.fr Language: English* - Date: 2012-05-24 09:10:50 Leuven 0V Etching Plasma Physics Materials science Technology IMEC
37	SiCl4/Cl2 plasmas: a new chemistry to etch high-k material selectively to Si-based alloys P. Bodarta, G. Cungea, C. Petit-Etiennea, M. Darnona, M. Haassa, S. Bannab, O.Jouberta and T.Lillb a CNRS-LTM, Add to Reading List Source URL: www-leti.cea.fr Language: English - Date: 2012-05-24 09:08:30 Plasma processing Technology Physics Etching Plasma CL2 Semiconductor device fabrication Materials science Microtechnology
38	Fluorocarbon-Based Passivation in STI Plasma Etching A.P. Milenina, R. Athimulama, M. Demanda, and B. Coenegrachtsb b Lam © IMEC[removed]CONFIDENTIAL Add to Reading List Source URL: www-leti.cea.fr Language: English - Date: 2012-05-24 09:11:51 Microtechnology Semiconductor device fabrication IMEC Leuven 45 nanometer 65 nanometer Etching OK Confidential Materials science Technology Electronics
39	SiCl4/Cl2 plasmas: a new chemistry to etch high-k material selectively to Si-based alloys P. Bodarta, G. Cungea, C. Petit-Etiennea, M. Darnona, M. Haassa, S. Bannab, O.Jouberta and T.Lillb a CNRS-LTM, Add to Reading List Source URL: www-leti.cea.fr Language: English - Date: 2012-05-24 09:08:30 Plasma processing Technology Physics Etching Plasma CL2 Semiconductor device fabrication Materials science Microtechnology
40	STUDY OF DAMAGE CAUSED BY NONREACTIVE Ar PLASMA ON AN ORGANIC LOW-K MATERIAL IMEC CORE CMOS JF de Marneffe, R. Ljazouli, L. Souriau, L. Zhang, C. Wilson, W. Boullart and M. R. Baklanov Add to Reading List Source URL: www-leti.cea.fr Language: English* - Date: 2012-05-24 09:10:50 Leuven 0V Etching Plasma Physics Materials science Technology IMEC

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